Unveiling the optimal selenization temperature for enhancing efficiency in flexible Cu(In,Ga)Se2 thin film solar cells,

Resumen: This work is centered on the growth of metallic precursors (Cu/In/Ga) through sequential evaporation, followed by a controlled ramping step selenization process aimed at synthesizing thin films based on copper indium gallium diselenide (CIGSe) on stainless steel substrates. Selenization temperatures ranging from 475 to 525°C were employed to optimize the most suitable recrystallization temperature. A comprehensive characterization was conducted, covering structural, morphological, topographical, optical, and electrical aspects, revealing the distinct role of selenization temperature. Subsequently, solar cells were fabricated using the synthesized absorbers, resulting in an impressive efficiency of 15.89 % for the absorber selenized at 525°C. This observation underscores the pivotal role of selenization parameters in shaping the quality of CIGSe, directly influencing the performance of solar cells. Consequently, this research not only focuses on refining the growth process of CIGSe through a modified approach but also provides valuable insights for the advancement of flexible solar cell technology.

Autores. Velumani Subrammaniam
Revista. Current Applied Physics
https://doi.org/10.1016/j.cap.2023.11.001